 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5060/D Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA (TO-92) package which is readily adaptable for use in automatic insertion equipment. * * * * Sensitive Gate Trigger Current -- 200 A Maximum Low Reverse and Forward Blocking Current -- 50 A Maximum, TC = 125C Low Holding Current -- 5 mA Maximum Passivated Surface for Reliability and Uniformity A 2N5060 2N5061 2N5062 * 2N5064 * *Motorola preferred devices SCRs 0.8 AMPERES RMS 30 thru 200 VOLTS G K MAXIMUM RATINGS (TJ = 25C unless otherwise noted.) Rating *Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = 25 to 125C) (RGK = 1000 ohms) 2N5060 2N5061 2N5062 2N5064 On-State Current RMS (All Conduction Angles) *Average On-State Current (TC = 67C) (TC = 102C) *Peak Non-repetitive Surge Current, TA = 25C (1/2 cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) *Peak Gate Power, TA = 25C *Average Gate Power, TA = 25C *Peak Forward Gate Current, TA = 25C (300 s, 120 PPS) *Peak Reverse Gate Voltage *Indicates JEDEC Registered Data. Symbol VDRM or VRRM K GA CASE 29-04 (TO-226AA) STYLE 10 Value Unit Volts 30 60 100 200 0.8 Amp Amp 0.51 0.255 ITSM I2t PGM PG(AV) IFGM VRGM 10 0.4 0.1 0.01 1 5 Amps A2s Watt Watt Amp Volts (cont.) IT(RMS) IT(AV) 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Thyristor Device Data (c) Motorola, Inc. 1995 1 2N5060 2N5061 2N5062 2N5064 MAXIMUM RATINGS -- continued Rating *Operating Junction Temperature Range @ Rated VRRM and VDRM *Storage Temperature Range *Lead Solder Temperature (Lead Length 1/16 from case, 10 s Max) Symbol TJ Tstg -- Value -65 to +125 -65 to +150 +230* Unit C C C q THERMAL CHARACTERISTICS Characteristic *Thermal Resistance, Junction to Case(1) Thermal Resistance, Junction to Ambient Symbol RJC RJA Max 75 200 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TC = 25C, RGK = 1000 unless otherwise noted.), (2) Characteristic *Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM) *Forward "On" Voltage(3) (ITM = 1.2 A peak @ TA = 25C) Gate Trigger Current (Continuous dc)(4) *(Anode Voltage = 7 Vdc, RL = 100 Ohms) Gate Trigger Voltage (Continuous dc) *(Anode Voltage = 7 Vdc, RL = 100 Ohms) (Anode Voltage = Rated VDRM, RL = 100 Ohms) Holding Current *(Anode Voltage = 7 Vdc, initiating current = 20 mA) Turn-On Time Delay Time Rise Time (IGT = 1 mA, VD = Rated VDRM, Forward Current = 1 A, di/dt = 6 A/s Turn-Off Time (Forward Current = 1 A pulse, Pulse Width = 50 s, 0.1% Duty Cycle, di/dt = 6 A/s, dv/dt = 20 V/s, IGT = 1 mA) Forward Voltage Application Rate (Rated VDRM, Exponential) *Indicates JEDEC Registered Data. 1. This measurement is made with the case mounted "flat side down" on a heat sink and held in position by means of a metal clamp over the curved surface. 2. For electrical characteristics for gate-to-cathode resistance other than 1000 ohms see Motorola Bulletin EB-30. 3. Forward current applied for 1 ms maximum duration, duty cycle 1%. 4. RGK current is not included in measurement. TC = 25C TC = -65C TC = 25C TC = -65C TC = 125C TC = 25C TC = -65C VGT VGD IH TC = 25C TC = 125C VTM IGT - - - - 0.1 - - - - - - 3 0.2 - - 200 350 0.8 1.2 - 5 10 - - Volts Symbol IDRM, IRRM - - - - - - 10 50 1.7 Min Typ Max Unit A A Volts A mA s td tr tq s 2N5060, 2N5061 2N5062, 5063, 5064 dv/dt - - - 10 30 30 - - - V/s p 2 Motorola Thyristor Device Data 2N5060 2N5061 2N5062 2N5064 CURRENT DERATING TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (C) FIGURE 1 - MAXIMUM CASE TEMPERATURE 130 120 110 100 90 80 70 60 50 0 0.1 0.2 0.3 0.4 0.5 IT(AV), AVERAGE ON-STATE CURRENT (AMP) = 30 120 180 = CONDUCTION ANGLE CASE MEASUREMENT POINT - CENTER OF FLAT PORTION FIGURE 2 - MAXIMUM AMBIENT TEMPERATURE 130 TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) = CONDUCTION ANGLE 110 TYPICAL PRINTED CIRCUIT BOARD MOUNTING dc dc 90 70 60 90 50 = 30 30 0 0.1 0.2 0.3 0.4 IT(AV), AVERAGE ON-STATE CURRENT (AMP) 60 90 120 180 FIGURE 3 - TYPICAL FORWARD VOLTAGE 5.0 FIGURE 4 - MAXIMUM NON-REPETITIVE SURGE CURRENT 10 ITSM , PEAK SURGE CURRENT (AMP) 7.0 5.0 3.0 2.0 TJ = 125C 25C 1.0 0.7 0.5 3.0 2.0 i T , INSTANTANEOUS ON-STATE CURRENT (AMP) 1.0 1.0 0.3 0.2 2.0 3.0 5.0 7.0 10 20 30 50 70 100 NUMBER OF CYCLES FIGURE 5 - POWER DISSIPATION 0.8 P(AV), MAXIMUM AVERAGE POWER DISSIPATION (WATTS) 0.1 0.07 0.05 120 180 0.6 = CONDUCTION ANGLE = 30 60 90 0.03 0.02 0.4 dc 0.2 0.01 0 0.5 1.0 1.5 2.0 2.5 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 0 0 0.1 0.2 0.3 0.4 0.5 IT(AV), AVERAGE ON-STATE CURRENT (AMP) Motorola Thyristor Device Data 3 2N5060 2N5061 2N5062 2N5064 FIGURE 6 - THERMAL RESPONSE 1.0 r(t), TRANSIENT THERMAL RESISTANCE NORMALIZED 0.5 0.2 0.1 0.05 0.02 0.01 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 t, TIME (SECONDS) TYPICAL CHARACTERISTICS FIGURE 7 - GATE TRIGGER VOLTAGE I GT , GATE TRIGGER CURRENT (NORMALIZED) 0.8 VG , GATE TRIGGER VOLTAGE (VOLTS) 0.7 VAK = 7.0 V RL = 100 RGK = 1.0 k 200 100 50 2N5062-64 20 10 5.0 2N5060-61 2.0 1.0 0.5 0.2 -75 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) VAK = 7.0 V RL = 100 FIGURE 8 - GATE TRIGGER CURRENT 0.6 0.5 0.4 0.3 - 75 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 9 - HOLDING CURRENT 4.0 I H , HOLDING CURRENT (NORMALIZED) 3.0 2.0 VAK = 7.0 V RL = 100 RGK = 1.0 k FIGURE 10 - CHARACTERISTICS AND SYMBOLS TYPICAL V - I CHARACTERISTICS VRRM V -V A- A i i V VDRM LOAD G 120V 60 ~ ON STATE IH A+ +V I BLOCKING STATE 1.0 0.8 2N5060,61 2N5062-64 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 K TJ, JUNCTION TEMPERATURE (C) 4 Motorola Thyristor Device Data 2N5060 2N5061 2N5062 2N5064 PACKAGE DIMENSIONS A R P SEATING PLANE B F L K STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- XX G H V 1 D J C SECTION X-X N N CASE 029-04 (TO-226AA) Motorola Thyristor Device Data 5 2N5060 2N5061 2N5062 2N5064 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 *2N5060/D* Motorola Thyristor Device Data 2N5060/D |
Price & Availability of 2N5061
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |